STMicroelectronics recently announced power semiconductors for Hybrid and Electric Vehicles (EVs) with a timetable for qualification to the automotive quality standard AEC-Q101. In EVs and hybrids, where better electrical efficiency means greater mileage, the new silicon-carbide (SiC) technology enables efficient battery management.

This list of new-generation rectifiers and MOSFETs for high-voltage power modules and discrete solutions also include a traction inverter, on-board battery charger, and auxiliary DC-DC converter.

Today’s power modules typically rely on standard silicon diodes and Insulated Gate Bipolar Transistors (IGBTs). Silicon carbide is a newer, wide-bandgap technology that allows smaller device geometries capable of operating well above the 400V range of today’s electric and hybrid drive trains. The SiC diode and transistor structures present lower internal resistance and respond more quickly than standard silicon devices, which minimize energy losses and allow associated components to be smaller, saving even more size and weight.

“Major carmakers and automotive Tier-1s are now committing to silicon-carbide technology for future product development to leverage its higher aggregate efficiency compared to standard silicon in a wide range of operating scenarios,” said Mario Aleo, Group Vice President and General Manager, Power Transistor Division, STMicroelectronics.

Industry’s most advanced processes are being used to fabricate SiC MOSFETs and diodes on 4-inch wafers. In order to drive down the manufacturing costs, improve the quality, and deliver the large volumes demanded by the auto industry, production of SiC MOSFETs and diodes to 6-inch wafers is being scaled up, and is on schedule to complete both conversions by the end of 2016.

ST has already qualified its 650V SiC diodes to AEC-Q101, and will complete qualification of the latest 650V SiC MOSFETs and 1200V SiC diodes in early 2017. The qualification of the 1200V SiC MOSFETs will be completed by the end of 2017.

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The STPSC20065WY 650V SiC diode is in full production now in DO-247. The STPSC10H12D 1200V SiC diode is sampling now in the TO-220AC package and goes to production this month, with volume production of the automotive-grade version planned for Q4 2016. Multiple current ratings from 6A to 20A and packaging options will also be available.

The SCTW100N65G2AG 650V SiC MOSFET is sampling now in the HiP247 package. It will ramp up in volumes in H1 2017. To enable more compact designs, a 650V SiC MOSFET in the surface-mount H2PAK will also be qualified to AEC-Q101 in H1 2017.

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