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Reference Design Of Phase-Shifted Full-Bridge Current-Doubler

The design converts 400V to 12V DC with up to 95.36% efficiency. It features advanced technology for high-frequency switching and is suitable for telecom and power supply applications.

full bridge

The SMPS market has recently shifted towards higher power density and cost optimization. Achieving high power density also necessitates high efficiency to minimize heat dissipation. While fully resonant topologies like LLC are often viewed as the best approach for this power range and voltage class, the 1000 W PSFB-CDR demonstrates how advancements in semiconductor technology and control algorithms have enabled a simple and well-known topology to achieve efficiency levels previously considered unattainable. The VD_1000W_GaN_PSFB_XDP is a reference design from Infineon Technologies for a 400 V DC to 12 V DC isolated phase-shifted full-bridge with a current-doubler rectifier (PSFB-CDR), using the XDPP1100-Q040 XDP digital power controller. 

The design delivers a programmable and configurable power converter that achieves up to 95.36% efficiency with a power density of 67 W/inch³. It features line-transient and load-transient performance through a hardware-based PID controller module and feed-forward (FF) response, ensuring voltage regulation under light load conditions.

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Integrated PMBus and I2C communication interfaces enhance system configuration, control, telemetry updates, and fault monitoring. Additionally, this design incorporates IGT60R070D1 high-voltage (HV) gallium nitride (GaN) FETs, enabling high-frequency switching at 350 kHz, suitable for power applications. Potential applications of this design include power supply units and telecommunications systems.

This system’s benefits include pre-programmed control for quick time-to-market. It features a power density of 110 W/in³ using GaN semiconductor switches. The system offers voltage, current, and temperature telemetry with fault protection. The control system responds quickly to changes. Additionally, it supports optimization through PMBus adjustments.

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The system features voltage accuracy up to ±0.5% across a full temperature range of -40 °C to 125 °C. It incorporates fully programmable digital control based on a 32-bit ARM® Cortexâ„¢-M0 processor. The system offers exceptional feed-forward and load regulation utilizing Infineon’s patented fast transient response control. System configuration, monitoring, and control are facilitated through PMBus and GUI support, with additional temperature compensation functionality.

Some of the key parameters of the design include:

  • Board Type: Virtual Design
  • Dimensions: 132mm× 55mm× 34mm
  • Family: OptiMOSâ„¢ 5 ; Digital power controller ; Gate Driver
  • Frequency: 350 kHz
  • Input Type: DC
  • Output Current: 0 A to 84 A
  • Output Voltage: 12 V
  • Pout: 1024 W
  • Supply Voltage: 360 V to 400 V

Infineon Technologies has tested this reference design. It comes with a bill of materials (BOM), schematics, assembly drawing, printed circuit board (PCB) layout, and more. The company’s website has additional data about the reference design. To read more about this reference design, click here.

Nidhi Agarwal
Nidhi Agarwal
Nidhi Agarwal is a journalist at EFY. She is an Electronics and Communication Engineer with over five years of academic experience. Her expertise lies in working with development boards and IoT cloud. She enjoys writing as it enables her to share her knowledge and insights related to electronics, with like-minded techies.

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