This innovation overcomes key challenges in traditional p-type semiconductors, paving the way for high-performance, cost-effective devices like thin-film transistors and flexible photodetectors, while opening doors to future applications in solar cells and wideband photodetectors.
Researchers from City University of Hong Kong (CityUHK) have made an advancement in inorganic semiconductors, enhancing the mobility of positively charged carriers, known as “holes.” Traditionally, most inorganic semiconductors rely on electrons as the primary charge carriers, limiting the development of complementary devices and circuits. The team has overcome this challenge through an innovative inorganic blending strategy that combines different p-type materials into a single compound called tellurium-selenium-oxygen (TeSeO).
TeSeO demonstrates exceptional adaptability and reliability, making it a promising solution to some of the longstanding challenges in semiconductor technology. According to team this innovation could pave the way for cost-effective, high-performance devices and circuits. The team has successfully developed air-stable, high-mobility TeSeO thin-film transistors and flexible photodetectors that outperform conventional p-type semiconductors like metal oxides and organic materials.A major obstacle in p-type semiconductor research has been the difficulty in adjusting the bandgap, a key factor that influences semiconductor properties.
The team solved this by engineering the band structure of TeSeO, achieving tunable bandgaps ranging from 0.7 to 2.2 eV. This wide range of tunable bandgaps allows TeSeO thin films to cover ultraviolet, visible, and short-wave infrared wavelengths, opening new opportunities for applications such as high-mobility p-channel transistors, solar cells, and wideband photodetectors. The team claims that this research represents a significant leap forward in semiconductor technology. They plan to explore further applications and optimize the potential of TeSeO materials. The team’s work sets a new standard for durable, high-performance semiconductor devices and could lead to a new era of advanced electronics.
