Smaller, more efficient products in the 750V and 1200V classes will scale up in volume through 2025, extending the benefits of silicon carbide from premium to mid-size and compact electric vehicles.
STMicroelectronics has unveiled its fourth-generation STPOWER silicon carbide (SiC) MOSFET technology. This advancement delivers new benchmarks in power efficiency, power density, and robustness, designed to meet the growing needs of the automotive and industrial sectors. The technology is especially optimized for traction inverters, a crucial component of electric vehicle (EV) powertrains, and represents the company’s ongoing commitment to innovation through 2027. The company’s vertically integrated manufacturing strategy plays a key role in delivering this cutting-edge technology to customers globally.
As a market leader in SiC power MOSFETs, the company is pushing the boundaries of SiC’s capabilities, which include greater efficiency and power density compared to traditional silicon devices. The new fourth-generation SiC MOSFETs are particularly beneficial for next-gen EV traction inverters, improving performance and energy savings. The technology, available in 750V and 1200V classes, aims to improve mid-size and compact EVs—key segments for achieving widespread EV adoption. These advances enable faster charging, lighter vehicles, and longer driving ranges, addressing consumer demands for more affordable electric vehicles.
Wider Applications and Industrial Use
Beyond the automotive sector, the new SiC technology is poised to enhance high-power industrial applications such as solar inverters, energy storage, and datacenters. These industries will benefit from the SiC MOSFETs’ higher energy efficiency and smaller footprint, crucial for reducing operational costs and improving system reliability. The company has already completed the qualification of the 750V SiC technology, with the 1200V version expected in early 2025. Future innovations include a fifth generation of SiC devices featuring even higher power density and reduced on-resistance, expected through 2027. The comprehensive strategy ensures it remains at the forefront of the e-mobility and industrial efficiency revolution.
Marco Cassis, President of Analog, Power & Discrete, MEMS and Sensors Group at STMicroelectronics, emphasized the company’s dedication to driving the future of electric mobility and industrial efficiency. “Our advancements in SiC MOSFET technology, coupled with a resilient supply chain, ensure industry-leading performance,” said Cassis.
