The NOR Flash memory designed for extreme environments offers unmatched radiation resistance, high-speed performance, and long-term reliability.
Infineon Technologies has unveiled the industry’s first radiationhardenedbydesign 512 Mbit QSPI NOR Flash memory, specifically designed for space and extreme environments. This highdensity, nonvolatile memory, fully QMLqualified, delivers unparalleled radiation and singleevent effects (SEE) performance. Operating at speeds up to 133 MHz, it is optimized for use with spacegrade FPGAs and microprocessors.
The device, partially funded by the U.S. Air Force Research Laboratory, Space Vehicles Directorate (AFRL), and codeveloped with Microelectronics Research Development Corporation (MicroRDC), leverages Infineon’s proven SONOS (SiliconOxide NitrideOxideSilicon) charge gate trap technology. It operates up to 30% faster than lowerdensity alternatives, enabling new levels of performance for space applications.
The key features include:
- 512 Mbit NOR Flash with 133 MHz QSPI interface for fast data transfer.
- Compatible with spacegrade processors and FPGAs.
- High endurance: up to 10,000 program/erase cycles.
- 10 years of reliable data retention.
- Radiationresistant for space applications.
Available in compact ceramic QFP (QMLV) and plastic TQFP (QMLP) packages, the device meets stringent industry standards, including DLAM certification. Ideal for FPGA configuration storage and standalone boot code for multicore processors,the new NOR Flash is now available. “Designers of advanced spacegrade systems require reliable, highdensity memory solutions,” said Richard Marquez, AFRL Space Electronics Technology Program Manager. “Infineon’s innovation, in collaboration with MicroRDC, achieves this with superior radiation performance and faster data rates.”
Joseph Cuchiaro, President of MicroRDC, highlighted the solution’s versatility: “With 512 Mbit density, designers can meet rigorous mission requirements across broader profiles, enhancing the capabilities of systems for extreme environments.”
Helmut Puchner, Vice President and Fellow for Aerospace and Defense at Infineon, emphasised the company’s dedication to advancing space technology: “This milestone in our rad-hard memory portfolio reflects our commitment to providing highly reliable, high-performance solutions for next-generation space applications.”
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