Nexperia has launched the IGBTs that are qualified for operation at high temperatures up to 175°C and equipped with fully rated fast recovery diodes.
Nexperia, a semiconductor company, has launched a series of 600 V insulated gate bipolar transistor (IGBT) devices with a current rating of 30 A. As per the company’s claim, the devices enable higher power density in a wide range of applications, including industrial motor drives such as servo motors (ranging from 5 to 20 kW at 20 kHz), robotics, elevators, grippers, manufacturing processes, power inverters, uninterruptible power supply (UPS), photovoltaic (PV) strings, Electric Vehicle (EV) charging, and induction heating and welding. The market for IGBT devices is projected to expand due to the growing adoption of solar panels and EV chargers. The IGBTs are fully rated as soft fast reverse-recovery diodes, making them suitable for rectifier and bi-directional circuit applications.
According to the press release issued by the company, the device offers a robust and cost-effective design known as carrier-stored trench-gate advanced field-stop (FS). This construction ensures low conduction and switching losses while maintaining high levels of ruggedness even at operating temperatures of up to 175°C. It enhances the efficiency and reliability of various applications such as power inverters, induction heaters, welding equipment, and industrial systems, including motor drives, servos, robotics, elevators, operating grippers, and in-line manufacturing. The IGBTs are claimed to be designed with precise parameter distributions, ensuring the safe parallel connection of multiple devices. Furthermore, they offer lower thermal resistance than competing devices, enabling them to deliver higher output power. Additionally, they can also protect against overcurrent conditions.
Some of the features of the IGBT include:
- Collector current (IC) rated at 30 A
- Low conduction and switching losses
- Stable and tight parameters for easy parallel operation
- Maximum junction temperature of 175 °C
- Fully rated as a soft fast reverse recovery diode
- 5 μs short circuit withstand time
- RoHS-compliant, lead-free plating
“With the release of these IGBTs, Nexperia provides designers with a greater choice of power-switching devices for a broad range of power applications”, according to Dr. Ke Jiang, General Manager Business Group Insulated-Gate Bipolar Transistors & Modules at Nexperia. “IGBTs are the ideal complement to Nexperia’s existing range of CMOS and wide-bandgap switching devices, making Nexperia a one-stop-shop for power electronics designers.”
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