Friday, November 22, 2024

GaN Power Chips With Better Efficiency

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The series of high-voltage transistors is designed for diverse applications, enhancing power efficiency and reducing energy loss across multiple technologies.

GaN

Infineon Technologies AG has introduced the CoolGaN Transistors 650 V G5, a series of high-voltage discretes, expanding its Gallium Nitride (GaN) product line. These transistors are aimed at a range of applications, including consumer and industrial switched-mode power supplies (SMPS) such as USB-C adapters and chargers, lighting solutions, televisions, data center and telecom rectifiers, renewable energy systems, and motor drives in household appliances.

Electronics manufacturers can enhance products like USB-C adapters, chargers, and televisions, while industrial equipment producers might use these transistors in SMPS for machinery. Lighting technology companies could use them to develop lighting solutions, and telecom and data center operators might use them in rectifiers for power systems. Renewable energy systems designers can manage power in solar and wind energy applications, and appliance manufacturers can make home devices. Additionally, research and development teams in various sectors can use these transistors to innovate and improve power electronics, making these transistors a choice for enhancing power efficiency and density across multiple applications.

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This CoolGaN generation replaces the CoolGaN Transistors 600 V G1, enabling quick redesigns of existing platforms. The new models offer enhancements over previous versions and competing products, featuring up to 50% less energy storage in output capacitance, a 60% increase in drain-source charge, and a reduction of up to 60% in gate charge. These changes lead to higher efficiency in various switching contexts, reducing power loss by 20% to 60% compared to traditional silicon-based technology.

The devices operate at high frequencies with minimal power loss, leading to improved power density. This allows for SMPS applications that are either more compact and lighter, or capable of increased output power within the same size constraints.

The transistor family also offers a range of on-resistance (R_DS(on)) and package combinations, with ten R_DS(on) classes available in multiple surface-mount device (SMD) packages, including ThinPAK 5×6, DFN 8×8, TOLL, and TOLT. 

Nidhi Agarwal
Nidhi Agarwal
Nidhi Agarwal is a journalist at EFY. She is an Electronics and Communication Engineer with over five years of academic experience. Her expertise lies in working with development boards and IoT cloud. She enjoys writing as it enables her to share her knowledge and insights related to electronics, with like-minded techies.

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