Provides very low resistance, making it easier to design and improving performance in battery storage and power supply systems.
Littelfuse, Inc. has announced the addition of the IXTN400N20X4 and IXTN500N20X4 Ultra Junction X4-Class Power MOSFETs to its 200 V X4-Class Ultra Junction MOSFET lineup. These devices offer low on-state resistance, enabling designers to replace multiple low-current rated MOSFETs with a single device. This reduces design complexity and enhances reliability and power density. The SOT-227B package includes screw-mounted terminals for stable mounting.
These new 200 V MOSFETs feature up to double the current ratings and up to 63% lower on-state resistance compared to existing X4-Class devices. The improvements make them suitable for applications requiring minimal on-state losses, such as Battery Energy Storage Systems (BESS), Battery chargers,,Battery formation,DC/battery load switches, Power supplies.
Key performance characteristics include:
- Reduced conduction losses
- Less effort for parallel connections
- Simplified driver and thermal designs
- Increased power density
MOSFETs with low on-state resistance are essential in applications where efficiency and minimal power dissipation are critical. These features contribute to lower heat generation, improving performance in systems such as power supplies, motor drivers, and battery-operated devices. The Ultra Junction X4-Class Power MOSFETs are available in 10-piece tubes through authorized distributors. Sample requests can be placed through the company’s website.
According to Sachin Shridhar Paradkar, Global Product Marketing Engineer at Littelfuse, the devices simplify gate driver design and improve power density, reliability, and PCB space utilization.
