Built on surface emitter technology, the high-speed device features a temperature coefficient of VF at -1.0 mV/K.
Vishay Intertechnology, Inc. has expanded its optoelectronics product line by introducing a new 890 nm high-speed infrared (IR) emitting diode, the Vishay Semiconductors TSHF5211. This component is encased in a clear, untinted leaded plastic package, ensuring durability and facilitating easy integration into various electronic systems.It utilises advanced surface emitter technology, resulting in a significant enhancement in performance. Its VF temperature coefficient, measured at -1.0 mV/K. This specification highlights it’s stability and reliability across different temperature ranges, making it suitable for precision and consistency applications. It exhibits improved radiant intensity, emitting a stronger IR signal than earlier models.
The key features include:
- Package type: leaded
- Package form: T-1¾
- Dimensions (in mm): Ø 5
This diode delivers superior-rise and fall times, critical parameters for high-speed applications. The faster response times ensure that the it can perform effectively in dynamic environments where quick signal transmission is crucial. It epresents a significant advancement in IR emitting diode technology, offering enhanced performance and reliability for a wide range of optoelectronic applications. It provides a radiant intensity of 235 mW/sr at a 100 mA drive current, a 50% improvement over earlier solutions. It features fast switching times of 15 ns, a typical forward voltage of 1.5 V, and a narrow ± 10° angle of half intensity. This makes it a suitable high-intensity emitter for applications such as smoke detectors and industrial sensors, offering effective spectral matching with silicon photodetectors.
The new diode is RoHS-compliant, halogen-free, and Vishay Green, ensuring it is lead (Pb)-free and can lead-free soldering up to 260 °C. Samples and production quantities are currently available, with a lead time of 20 weeks for large orders.
