Monday, April 28, 2025

Industry Leading 1200 V SiC MOSFETs

- Advertisement -

The 1200 V SiC MOSFETs with top-side cooling provide better cooling, easy setup, and reliable performance for industrial use and EV charging stations.

Nexperia launches industry leading 1200 V SiC MOSFETs in top-side cooled X.PAK
Nexperia launches industry leading 1200 V SiC MOSFETs in top-side cooled X.PAK

Nexperia has launched a series of 1200 V silicon carbide (SiC) MOSFETs designed for industrial applications, featuring strong thermal stability in a surface-mount (SMD) top-side cooled package called X.PAK. With a compact 14 mm x 18.5 mm design, X.PAK combines the assembly ease of SMD with the cooling benefits of through-hole technology, improving heat dissipation. This release meets the demand for discrete SiC MOSFETs in high-power applications such as battery energy storage systems (BESS), photovoltaic inverters, motor drives, uninterruptible power supplies (UPS), and EV charging stations.

This product is suitable for engineers working on high-power systems and EV charging stations. It’s also useful for manufacturers needing better cooling and power management, PCB designers and assembly teams using its top-side cooling for easier production, and R&D teams creating advanced energy solutions.

- Advertisement -

The X.PAK package enhances thermal performance by reducing heat dissipation through the PCB while maintaining low inductance for surface-mount components and enabling automated board assembly.

The SiC MOSFETs offer excellent figures-of-merit (FoM), particularly in RDS(on), a key factor in conduction losses. While many manufacturers focus on nominal RDS(on) values, which can double as temperatures rise, Nexperia’s devices show only a 38% increase over an operating range of 25 °C to 175 °C, ensuring more stable and efficient performance.

“The introduction of our SiC MOSFETs in X.PAK packaging marks a significant advancement in thermal management and power density for high-power applications,” said Katrin Feurle, Senior Director and Head of SiC Discretes & Modules at Nexperia. “This new top-side cooled product option builds on our successful launches of discrete SiC MOSFETs in TO-247 and SMD D2PAK-7 packages. It underscores Nexperia’s commitment to providing our customers with the most advanced and flexible portfolio to meet their evolving design needs.”

Nidhi Agarwal
Nidhi Agarwal
Nidhi Agarwal is a Senior Technology Journalist at EFY with a deep interest in embedded systems, development boards and IoT cloud solutions.

EFY Prime

Unique DIY Projects

Electronics News

Truly Innovative Electronics

Latest DIY Videos

Electronics Components

Electronics Jobs

Calculators For Electronics

×