Advanced 3D NAND in storage enables rich, seamless multimedia experiences with improved performances than its previous generation
Claimed to be the world’s first 176-layer NAND, Micron Technology’s Universal Flash Storage (UFS) 3.1 is built for high-end and flagship phones. The discrete solution, which offers a compact design ideal for high capacity, small form factors in mobile devices, unlocks 5G’s potential with up to 75% faster sequential write and random read performance than prior generations, enabling downloads of two-hour 4K movies in as little as 9.6 seconds.
The device provides 15% faster mixed workload performance than its prior generation, enabling faster app launching and switching across multiple apps for a smoother mobile experience. Without storage as a bottleneck, it gives the advantage of 5G’s speeds with the powerful combination of UFS 3.1 and Micron’s 176-layer NAND.
Key Features include:
- Improved performance: Micron’s 176-layer UFS 3.1 solution brings 75% faster sequential write and 70% faster random read performance over previous generations, dramatically accelerating application performance.
- Faster downloads: The up to 1,500 MB/s sequential write performance translates to an ability to download a 10-minute 4K (2,160 pixels) YouTube video stream in 0.7 seconds or a two-hour 4K movie in 9.6 seconds.
- Smoother mobile experience: As compared to its predecessor, Micron’s 176-layer UFS 3.1 solution and its premium quality of service results in about 10% shorter latency for faster response times and a more reliable mobile experience.
- Improved endurance: Micron’s 176-layer mobile solution boasts up to 2x the improved total bytes written versus its previous-generation product. This allows twice the total data to be stored without degrading the device’s reliability and extending the smartphone’s life span for heavy usage.
“5G delivers multigigabit speeds to mobile devices, and a high-performance hardware foundation is critical to powering these lightning-fast mobile experiences,” said Raj Talluri, senior vice president and general manager of Micron’s Mobile Business Unit. “Our breakthrough 176-layer NAND supercharges smartphones with unparalleled performance, delivering rich multimedia content to consumers’ fingertips in a flash.”
“Micron’s first-of-its-kind combination of UFS 3.1 and 176-layer NAND will give our HONOR Magic3 Series an edge as the first smartphone to debut with this high-performance 3D NAND solution,” said Fang Fei, president of product line at Honor Device Co., Ltd. “Users of our new flagship HONOR Magic3 Series will be able to enjoy snappy, seamless multitasking across apps, fast downloads and storage supported by Micron’s industry-leading solution.”
The 176-layer UFS 3.1 discrete mobile NAND is offered in 128GB, 256GB and 512GB capacities.
