Infineon has announced a new addition to its CoolSic portfolio with 2 kV silicon carbide (SiC) MOSFETs along with a 2kV SiC diode for applications up to 1500 VDC. The 2 kV voltage class devices are designed to enable simple, high-power-density solutions for 1500 VDC applications. The 2 kV CoolSiC MOSFET offers a low drain-source on-resistance (R DS(on)) value along with low-switching losses and a high-blocking voltage in one device that can optimally meet the requirements of 1500 VDC systems.
The move towards green energy and higher adoption of electric vehicles (EVs) has caused a massive increase in demand for high-power density. The high power application has led to the adoption of 1500 VDC links in their applications to increase the rated power-per-inverter and reduce system costs. But, according to the company, the 1500 V systems also pose more challenges to the system design, such as fast switching at high DC voltage, which typically requires a multi-level topology which leads to a complicated design and a relatively high number of components. Infineon’s 2kV SiC MOSFET can facilitate the foundation for next-generation photovoltaic, EV charging, and energy storage systems.
According to the company, the technology enables sufficient overvoltage margin and offers a ten times lower FIT rate caused by cosmic rays, compared to the company’s 1700 V SiC MOSFETs. Furthermore, the extended gate voltage operating range makes the devices easy to use. The SiC MOSFET chip is based on Infineon M1H, an advanced SiC MOSFET technology that enables a significantly larger gate voltage window that improves the on-resistance for a given die size. Moreover, the larger gate voltage also makes it more robust against the driver- and layout-related voltage peaks at the gate, without any negative effects at high switching frequencies.
The samples of the 2 kV CoolSiC MOSFETs are currently available in the EasyPACK 3B and 62mm modules, while the same will be made available in a high-voltage discrete TO247-PLUS package at a later time.
