PSMN1R9-100SSE and 100V PSMN2R3-100SSE application-specific MOSFETs (ASFETs) offer 40% lower RDS(on) and increase power density by 58x for telecom & computing hot-swap computing applications.
Nexperia has released two new application-specific MOSFETs (ASFETs) named PSMN1R9-100SSE and 100V PSMN2R3-100SSE for hot-swap with an enhanced safe operating area (SOA), the two MOSFETs are rated for 80V operations and 100V operations respectively. These MOSFETs come in a smaller size compared to any existing product with similar rating making it possible for designers to create smaller modules for hot-swap applications. The MOSFETs comes in 8×8 mm LFPAK88 package that is suitable for use in high temperatures applications. Moreover, the company has simplified the job of design engineers by providing hot SOA curves in the datasheet. The new MOSFETs offers 40% lower RDS(on) and increased power density by 58x for telecom & hot-swap computing applications.
According to the company, the new ASFETs for hotswap have fully characterized SOA at both 25 °C and 125 °C. Fully tested, hot SOA curves are provided within the datasheets, removing the need for design engineers to perform thermal de-rating calculations, and significantly extending the useful hot SOA performance. The low RDS(on) offered by the MOSFETs helps in minimizing the I2R losses when the ASFET is fully turned on. Furthermore, the new MOSFETs achieves 10% SOA improvement compared to previous generations in D2PAK packages.
The 80V ASFET, PSMN1R9-100SSE is suitable for the 48 V power rails in computing servers and other industrial applications where environmental conditions allow for MOSFETs with a lower BVDS rating. The higher-powered 100V PSMN2R3-100SSE delivers low RDS(on) and strong linear-mode (safe operating area) performance in a compact 8×8 mm footprint, making it suitable for demanding hot-swap applications.
Nexperia is a Dutch company based out of Nijmegen. It is a high-volume manufacturer of essential semiconductors, such as diodes, bipolar transistors, ESD protection devices, MOSFETs, GaN FETs and analog & logic ICs.
