Innoscience Technology has launched a new device that can protect your phone due to temperature rise while charging, as part of its Bi-GaN devices that have superior features such as high frequency, high efficiency, and low resistance which are necessary for fast charging. The main attribute of BiGAN HEMT is to reduce on-state resistance by 50% chip i.e. as low as 4.8 mΩ, and chip size by 70 %, while reducing temperature rise by 40%.
Innoscience Technology is a supplier of low-cost gallium-nitride-on-silicon (GaN-on-Si) power solutions. INN040W0488 is a 40-V bi-directional GaN-on-silicon HEMT device, available in a WLCSP package measuring 2.1 mm x 2.1 mm. The company assures to replace NMOS MOSFETs with BiGAN HEMT in a common-source configuration to receive bi-directional switching of battery’s charging and discharging currents. The main attribute of BiGAN HEMT is to reduce on-state resistance by 50% chip i.e. as low as 4.8 mΩ, and chip size by 70 %, while reducing temperature rise by 40%. OPPO has confirmed that using BiGAN HEMT in smartphones has reduced space usage and has also noticed a significant reduction in the temperature rise of the phone during charging.
Conventional Silicon MOSFETs used as power switches in cell phones result in considerable temperature rise and power loss while fast charging. Gallium nitride (GaN) was never used in smartphones, OPPO being the world’s first mobile manufacturer to use bi-directional GaN high electron mobility transistor (HEMT) devices in its smartphone to manage the battery’s charging and discharging currents. Previously, this GaN-based protection circuitry had to be incorporated inside the charger.
