Cutting-edge 1200 V discrete devices deliver top-tier performance, propelling the worldwide shift towards sustainable energy solutions.
Nexperia introduced its first-ever Silicon Carbide (SiC) MOSFETs, marking a significant advancement in the power semiconductor market. The company has unveiled two discrete devices with a voltage rating of 1200 V, encapsulated in 3-pin TO-247 packaging, featuring RDS(on) values of 40 mΩ and 80 mΩ. These products, NSF040120L3A0 and NSF080120L3A0, represent the initial offerings in a series of planned releases, as the company prepares to expand its SiC MOSFET portfolio, catering to diverse requirements in both through-hole and surface-mounted packages.
The release of these SiC MOSFETs is a pivotal response to the surging market demand for high-performance SiC MOSFETs, primarily in industrial applications, including electric vehicle (EV) charging infrastructure, uninterruptible power supplies (UPS), and inverters for solar energy and energy storage systems (ESS). One of the standout feature is their RDS(on), a critical parameter affecting conduction power losses. Unlike many currently available SiC devices in the market, the company’s innovative process technology ensures industry-leading temperature stability, with RDS(on) values increasing by only 38% over an operating temperature range from 25°C to 175°C.
SiC MOSFETs also boast a low total gate charge (QG), reducing gate drive losses. They also feature a meager ratio of QGD to QGS, enhancing immunity against parasitic turn-on. With a positive temperature coefficient and ultra-low spread in device-to-device threshold voltage (VGS(th)), these MOSFETs provide balanced current-carrying performance under static and dynamic conditions, especially when operated in parallel. Furthermore, the low forward voltage of the body diode (VSD) increases device robustness and efficiency, relaxing the dead-time requirement for asynchronous rectification and free-wheel operation. The company plans to release automotive-grade MOSFETs, further expanding its SiC MOSFET offeringsng and a new era of SiC MOSFET technology and innovation in the power electronics industry.
Katrin Feurle, Senior Director & Head of Product Group SiC at Nexperia, expressed the significance of this milestone, stating, “With these inaugural products, Nexperia and Mitsubishi Electric wanted to bring true innovation to a market that has been crying out for more wide-bandgap device suppliers.these SiC MOSFET devices offer best-in-class performance across several critical parameters. Notably, they exhibit exceptional RDS(on) temperature stability, low body diode voltage drop, precise threshold voltage specification, and a well-balanced gate charge ratio that enhances device safety against parasitic turn-on. Feurle also highlighted the collaboration with Mitsubishi Electric, foreseeing significant advancements in SiC device performance in the years ahead.”
Toru Iwagami, Senior General Manager, Power Device Works, Semiconductor & Device Group at Mitsubishi Electric, shared his enthusiasm about the partnership, calling these new SiC MOSFETs the first fruits of their collaboration. He stressed Mitsubishi Electric’s accumulated expertise in SiC power semiconductors and the unique balance of characteristics that their devices offer.
