This will revolutionise various power semiconductor applications, including electric vehicle charging and renewable energy, by enabling higher energy efficiency and contributing to global decarbonisation efforts.
Infineon Technologies has announced the launch of its next-generation silicon carbide (SiC) MOSFET trench technology, marking a significant advancement in power systems and energy conversion. The new CoolSiC MOSFET 650 V and 1200 V Generation 2 (G2) has up to 20 per cent improvement in key performance metrics such as stored energies and charges compared to their predecessors, without compromising quality and reliability. This enhancement will increase energy efficiency and further contribute to decarbonisation efforts.
The MOSFET G2 technology capitalises on the performance capabilities of silicon carbide, enabling lower energy loss and higher efficiency during power conversion. This substantially benefits various power semiconductor applications, including photovoltaics, energy storage, DC electric vehicle (EV) charging, motor drives, and industrial power supplies. For instance, a DC fast charging station for EVs equipped with CoolSiC G2 can achieve up to 10 percent less power loss than previous generations, while allowing for higher charging capacity without compromising form factors. Additionally, traction inverters based on CoolSiC G2 devices can further increase electric vehicle ranges, and solar inverters designed with this technology can achieve smaller sizes while maintaining high power output, resulting in lower cost per watt.
The key features include:
- 650 V/1200 V CoolSiC MOSFET Generation 2
- Unmatched low on-resistance (RDS(on))
- The most extensive product range in the market
- Distinctive features for enhanced robustness
The company claims that their technology, combined with their.XT packaging technology further enhances the performance and reliability of designs based on CoolSiC G2. This allows for higher thermal conductivity, better assembly control, and improved performance. Infineon’s mastery of various power technologies, including silicon, silicon carbide, and gallium nitride (GaN), provides design flexibility and leading-edge application know-how, meeting the expectations and demands of modern designers. Semiconductors based on wide-bandgap materials like SiC and GaN are key to conscious and efficient energy use, fostering decarbonisation in the industrial, consumer, and automotive sectors.
Dr. Peter Wawer, Division President of Green Industrial Power at Infineon, emphasised the importance of innovative solutions in addressing megatrends related to energy generation, transmission, and consumption. He stated, “With the CoolSiC MOSFET G2, Infineon brings silicon carbide performance to a new level. This new generation of SiC technology enables the accelerated design of more cost-optimized, compact, reliable, and highly efficient systems harvesting energy-savings and reducing CO2 for every watt installed in the field.”
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