Engineered to reduce reverse conduction losses and eliminate dead-time penalties, this innovation enables higher performance across applications like telecom, servers, DC-DC converters, USB-C chargers, PSUs, and motor drives.
Infineon Technologies AG has announced the release of the world’s first industrial-grade gallium nitride (GaN) transistor family featuring an integrated Schottky diode. The new CoolGaN Transistor G5 series sets a new benchmark for power systems, delivering enhanced efficiency and streamlined design for a wide range of industrial applications.
The key features are:
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- Unlike conventional GaN transistors, CoolGaN G5 reduces reverse conduction losses.
- Integrated Schottky diode lowers conduction losses during third-quadrant operation.
- Enhanced compatibility with standard power controllers simplifies system design.
- First product: 100 V, 1.5 mΩ GaN transistor in a compact 3 x 5 mm PQFN package.
It directly addresses the challenges engineers face when designing with GaN technology. In hard-switching applications, GaN transistors typically suffer from increased power losses due to high reverse conduction voltages, especially during extended controller dead-times. Until now, designers were forced to compensate with external Schottky diodes or carefully tuned controllers—solutions that add complexity, cost, and development time.
The CoolGaN G5 transistors eliminate these challenges by integrating a Schottky diode directly into the device. This design reduces dead-time-related losses and simplifies power stage design, offering developers a more efficient and cost-effective path to performance optimization. Targeting applications such as server and telecom intermediate bus converters (IBCs), DC-DC converters, USB-C battery chargers, high-power power supply units (PSUs), and motor drives, the new CoolGaN G5 family supports a wide range of demanding industrial systems.
“As GaN adoption accelerates across the power electronics landscape, Infineon remains committed to raising performance standards,” said Antoine Jalabert, Vice President of Infineon’s Medium-Voltage GaN Product Line. “The CoolGaN G5 with integrated Schottky diode highlights our focus on meaningful innovation, empowering customers to simplify designs while improving efficiency.”
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