They empower designers to improve performance in efficiency, thermal management and power density with increased flexibility
GaN Systems, a provider of GaN power semiconductors, has introduced two new transistors: the GS-065-011-2-L and the GS-065-030-2-L. While the former enables cost reduction for per watt of delivered power in 45W to 150W applications, the latter delivers advantages of low-cost GaN in applications up to the 3,000W power level. These new parts add to the GaN Systems family of low-cost GaN transistors that empower designers to improve performance in efficiency, thermal management and power density. Having increased design flexibility and cost-effectiveness helps meet new demands from consumer, industrial and data centre customers. These new transistors feature lower on-resistance, increased robustness, and thermal performance, higher VDS(transient) rating, and an industry-standard form factor that eases customer adoption, scalability and commercialisation.
The GS-065-011-2-L is a 650 V, 11 A, 150 mΩ bottom-side cooled transistor that is ideal for consumer electronics applications such as chargers and adaptors, including higher power adaptor designs that benefit from the transistor’s improved thermal performance.
The GS-065-030-2-L is a 650 V, 30A, 50 mΩ bottom-side cooled transistor, which features the lowest RDS(on) in GaN Systems’ PDFN product family. This means lower power loss and higher power rating, resulting in higher efficiency and power density. The GS-065-030-2-L GaN transistor is perfect for data centre, industrial and 5G applications such as telecom and server SMPS, motor drives, energy storage systems and Bridgeless Totem Pole PFC solutions.
“With these new GS-065-011-2-L and GS-065-030-2-L products, our customers can leverage the benefits that come from smaller, more efficient, and more cost-effective power electronics,” said Jim Witham, CEO at GaN Systems.
Packaged in an industry-standard 8×8 mm PDFN package, the products are now available at GaN Systems’ distributors.
