Suitable for DC-DC power converters and power factor correction, the IGBTs reduce switching losses and increase switching frequency
With superior switching frequencies and reduced switching losses, here’s presenting the 650 V CoolSiC Hybrid IGBT series that combines key benefits of the 650 V TRENCHSTOP 5 IGBT technology and the unipolar structure of co-packed Schottky barrier CoolSiC diodes. The device series is suitable for DC-DC power converters and power factor correction (PFC), and can be typically found in applications like battery charging infrastructure, energy storage solutions, photovoltaic inverters, uninterruptable power supplies (UPS), as well as server and telecom switched-mode-power supplies (SMPS).
Due to a freewheeling SiC Schottky barrier diode co-packed with an IGBT, the CoolSiC Hybrid IGBTs perform with significantly reduced switching losses at almost unchanged dv/dt and di/dt values, offering up to 60 per cent and 30 per cent reduction of Eon and Eoff respectively. Alternatively, the switching frequency can be increased by 40 per cent with unchanged output power requirements. A higher switching frequency allows a reduced passive component size and low bill-of-material cost. The Hybrid IGBTs can be used as a drop-in replacement for TRENCHSTOP 5 IGBTs, allowing an efficiency improvement of 0.1 per cent for each 10 kHz switching frequency without redesign efforts.
The product family creates a bridge between pure silicon solutions and high performing SiC MOSFET designs. In comparison to pure silicon designs, Hybrid IGBTs can improve electromagnetic compatibility and system reliability. Because of the unipolar nature of Schottky barrier diodes, the diode can switch fast without severe oscillations and risk of a parasitic turn-on.
Users can choose between a TO-247-3 or a TO-247-4 pin Kelvin Emitter package. The fourth pin of the Kelvin Emitter package allows for an ultra-low inductance gate-emitter control loop and reduces the total switching losses.
The CoolSiC Hybrid discrete IGBT family follows the success-path of earlier released CoolSiC Hybrid IGBT EasyPACK 1B and 2B modules with IGBT chip and CoolSiC Schottky diode. It comprises 40 A, 50 A, and 75 A 650 V TRENCHSTOP 5 ultra-fast H5 IGBTs co-packed with half-rated CoolSiC Gen 6 diodes or medium speed S5 IGBTs co-packed with full-rated CoolSiC Gen 6 diodes. The discrete portfolio can be ordered now from Infineon Technologies AG.
