Combines ultra-low switching losses, high efficiency and superior robustness, even at high temperatures
Beijing, China, October 17, 2017 —Littelfuse, Inc. introduced its first series of silicon carbide (SiC) MOSFETs, the latest addition to the company’s growing power semiconductor line. In March, Littelfuse took another incremental step towards establishing industry leadership in the power semiconductor industry through a majority investment in the well-respected SiC technology development company, Monolith Semiconductor Inc. The LSIC1MO120E0080 Series, with a voltage rating of 1200V and ultra-low (80mΩ) on-resistance, is the first organically designed, developed, and manufactured SiC MOSFETs to be released by this partnership. This device is optimized for high-frequency switching applications, providing a combination of ultra-low switching losses and ultra-fast switching speeds that’s unavailable with traditional power transistor solutions.
When compared with silicon devices that have the same rating, the SiC MOSFET Series enables substantially greater energy efficiency, reduced system size/weight, and increased power density in power electronics systems. It also offers superior robustness and exceptional performance, even at high operating temperatures (150°C).
Typical applications for these new SiC MOSFETs include power conversion systems such assolar inverters, switch mode power supplies, UPS systems, motor drives, high voltage DC/DC converters, battery chargers and induction heating.
“Our new SiC MOSFET Series is a critical milestone in our journey to become a leading component supplier in the power semiconductor industry,” said Michael Ketterer, product marketing manager for Power Semiconductors, Electronics Business Unit at Littelfuse. “Our SiC MOSFET application support network is prepared to help customers enhance the performance of their existing designs, as well as assist those developing new power converter products.”
The LSIC1MO120E0080 Series SiC MOSFET offers these key benefits:
• Ultra-fast switching supports higher efficiency and increased power density.
• Lower switching losses allow for higher switching frequencies.
• Higher operating temperatures ensure greater device robustness in a wider array of high temperature applications.
